9397 750 13385
? Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 2 of 7
Philips Semiconductors
BAT18
Silicon planar diode
4. Marking
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
5. Limiting values
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board.
7. Characteristics
Table 3: Marking
Type number
Marking code[1]
BAT18 10*
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
continuous reverse voltage - 35 V
IF
continuous forward current - 100 mA
Tstg
storage temperature
?55 +125
°C
Tj
junction temperature - 125
°C
Table 5: Thermal characteristics
Tj
= 25
°C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-tp)
thermal resistance from junction to tie-point 330 K/W
Rth(j-a)
thermal resistance from junction to ambient
[1]
500 K/W
Table 6: Electrical characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage IF
= 100 mA; see
Figure
1
- - 1.2 V
IR
reverse current see
Figure
2
VR
= 20 V - - 100 nA
VR
= 20 V; Tj
=60°C --1μA
Cd
diode capacitance VR= 20 V; f = 1 MHz; seeFigure3
- 0.8 1.0 pF
rD
diode forwardIF= 5 mA; f = 200 MHz; seeFigure4
- 0.5 0.7Ω
resistance
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